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P-doped Germanium Nanowires with Fanobroadening in Raman Spectrum
【文件类型】 【消费金额】1.8 【文章页数】6 【会员操作】  
【文章作者】何亮;XIONG Biao;ZHOU Peng;LUO Wen;SONG Peishuai;WANG Xukun;HAO Zhimeng;YANG Xiao;NIU Chaojiang;TIAN Xiaocong;YAN Mengyu;麦立强;
【文章摘要】      The optimized growth conditions for high density germanium(Ge) nanowires and P-doped Ge nanowires on Si(111) substrate were investigated,the phosphorus(P)-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition(VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH_4 as precursor and PH_3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy(SEM),the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm~(-1)) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm~(-1),respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH_3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.
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【期刊】【卷】【ISSUE】【ISSUEID】    【文章期份】2016    【发布日期】2016/3/15 0:00:00    点击率:1    打印    关闭
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