| 【文章摘要】 Al-doped ZnO(AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(P_(O2)).The effect of P_(O2) on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_(O2).At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the(0001) plane parallel to the substrate surface,i e,the epitaxial relationship was AZO(000 1) // A1_2O_3(000 1).With increasing P_(O2),the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%. |