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Intrinsic Carrier Concentration as a Function of Stress in(001),(101) and(111) BiaxiallyStrained-Si and Strained-Si_(1-x)Ge_x
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| 【文章作者】靳钊;QIAO Liping;LIU Lidong;HE Zhili;GUO Chen;LIU Ce; |
| 【文章摘要】 Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of strained Si and Si1-xGex materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and Si1-xGex materials has been still lacking. In this paper, by analyzing the band structure of strained Si and Si1-xGex materials, both the effective densities of the state near the top of valence band and the bottom of conduction band( Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction(x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si(001) and Si1-xGex(001) and(101) materials at 300 K increases significantly with increasing Ge fraction(x), which provides valuable references to understand the Sibased strained device physics and design. |
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【期刊】Journal of Wuhan University of Technology(Materials Science Edition)【卷】【ISSUE】【ISSUEID】
【文章期份】2015
【发布日期】2016/1/8 0:00:00
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