| 【文章摘要】 The Cu_xSi_(1-x) thin films have been grown by pulsed laser deposition(PLD) with in situ annealing on Si(001) and Si(111),respectively.The transformation of phase was detected by X-ray diffraction(XRD).The results showed that the as-deposited films were composed of Cu on both Si(001) and Si(111).The annealed thin films consisted of Cu +η "-Cu_3Si on Si(001) while Cu +η'-Cu_3Si on Si(111),respectively,at annealed temperature(T_a)= 300-600℃.With the further increasing of T_a,at T_a= 700℃,there was only one main phase,η"-Cu_3Si on Si(001) while η'-Cu_3Si on Si(111),respectively.The annealed thin films transformed from continuous dense structure to scattered-grain morphology with increasing T_a detected by field emission scanning electron microscope(FESEM).It was also showed that the grain size would enlarge with increasing annealing time(t_a). |