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Carrier Transport Across Grain Boundaries in Polycrystalline Silicon Thin Film Transistors
【文件类型】 【消费金额】1.8 【文章页数】6 【会员操作】  
【文章作者】陈勇;ZHANG Shuang;李璋;HUANG Hanhua;WANG Wenfeng;ZHOU Chao;CAO Wanqiang;周郁明;
【文章摘要】      We established a model for investigating polycrystalline silicon(poly-Si) thin film transistors(TFTs).The effect of grain boundaries(GBs) on the transfer characteristics of TFT was analyzed by considering the number and the width of grain boundaries in the channel region,and the dominant transport mechanism of carrier across grain boundaries was subsequently determined.It is shown that the thermionic emission(TE) is dominant in the subthreshold operating region of TFT regardless of the number and the width of grain boundary.To a poly-Si TFT model with a 1 nm-width grain boundary,in the linear region,thermionic emission is similar to that of tunneling(TU),however,with increasing grain boundary width and number,tunneling becomes dominant.
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【期刊】【卷】【ISSUE】【ISSUEID】    【文章期份】2016    【发布日期】2016/3/15 0:00:00    点击率:1    打印    关闭
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